| 摘要 |
PROBLEM TO BE SOLVED: To provide a honing processing method for a single crystal wafer, which is capable of improving the processing yield and the yield in device process. SOLUTION: This method for honing processing comprises integrally arranging an ultraviolet curing film with a protective film on the main surface to be processed of a single crystal wafer, then heating the single crystal wafer to peel off the protective film, lowering the temperature of the single crystal wafer to a temperature lower than that at which the protective film is peeled, exposing the film to light, developing to form a fine hole pattern and finally subjecting to honing processing. |
