| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a structure capable of suppressing a crack generated in an electrode from extending into a semiconductor substrate.SOLUTION: A semiconductor device 2 comprises a semiconductor substrate 10, and a surface electrode 40 formed on the semiconductor substrate 10. The surface electrode 40 includes an AlSi-made first electrode layer 42 formed on the semiconductor substrate 10, an Al-made second electrode layer 44 formed on a surface of the first electrode layer 42, and an AlSi-made third electrode layer 46 formed on a surface of the second electrode layer 44. The intensity of the second electrode layer 44 is higher than the intensity of the third electrode layer 46.SELECTED DRAWING: Figure 1 |
