发明名称 METHOD FOR FORMING THIN FILM
摘要 PROBLEM TO BE SOLVED: To provide a method for forming a thin film, which can remove negative ions generated by plasma, and control the number and energy of positive ions and electrons that reach a substrate. SOLUTION: This method for forming the thin film comprises controlling tracks of the positive ions and electrons in plasma, and controlling quantity and energy of each the incident positive ions and electrons onto a substrate by operating an electrode consisting of a conductor or a semiconductor to which a positive or negative electric field or a ground potential can be applied, or by operating a mechanism which uses a magnetic field, or the like.
申请公布号 JP2003073824(A) 申请公布日期 2003.03.12
申请号 JP20010261286 申请日期 2001.08.30
申请人 CANON INC 发明人 KANAZAWA HIDEHIRO;OTANI MINORU;ANDO KENJI;SUZUKI YASUYUKI;NOBUMIYA TOSHIAKI;HIROO RYUJI
分类号 H05H1/46;C23C14/06;C23C14/34 主分类号 H05H1/46
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