| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device with an ultra-low resistivity copper wiring by improving crystallinity by making a copper wiring in a wiring groove include no impurity.SOLUTION: According to an embodiment of the present invention, when a semiconductor integrated circuit device has copper crystal grains of a copper wiring grown by electric plating and thermal processing, an element which has high affinity with copper and also has high affinity with chlorine oxide is specified as an impurity which hinders movement of a crystal grain boundary of copper by pinning effect. Further, the affinity with the copper is determined by calculating cohesive energy showing a difference between a state in which the copper and impurity are bound and a state in which they are not bound, but independent, and the affinity with the chlorine oxide is determined by calculating cohesive energy showing a difference between a state in which the chlorine oxide and impurity are bound and a state in which they are independent.SELECTED DRAWING: Figure 9 |
