发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce manufacturing cost in manufacturing a semiconductor device of MAP system. SOLUTION: In a method of manufacturing a semiconductor device in which a substrate having semiconductor chips mounted on a main surface thereof in matrix is sandwiched between a lower mold and an upper mold and clamped, an insulative resin is injected from a gate into a cavity formed on the main side of the substrate, air inside the cavity is dissipated to form an encapsulating package which covers the each semiconductor chip, bump electrodes are formed on the reverse side of the substrate, and then the encapsulating package and substrate are cut vertically and horizontally to manufacture a plurality of semiconductor devices, the air vent is formed of a groove provided on the substrate. The groove is provided on an extended area of each chip line fixed on the substrate, not on an extended area between each chip line. Width of the groove is shorter than that of the semiconductor chip.
申请公布号 JP2003077946(A) 申请公布日期 2003.03.14
申请号 JP20010264481 申请日期 2001.08.31
申请人 HITACHI LTD;NORTHERN JAPAN SEMICONDUCTOR TECHNOLOGIES INC 发明人 HAYASHIDA TETSUYA;KASAI NORIHIKO
分类号 H01L23/29;H01L21/56;H01L21/68;H01L21/98;H01L23/13;H01L23/31;H01L23/498 主分类号 H01L23/29
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