| 摘要 |
Provided is a composition for forming a resist underlayer film which is capable of forming a resist underlayer film enabling the use of PGMEA and the like as a solvent and having excellent solvent-resistance properties, etching-resistance properties, heat-resistance properties, and embeddability. The present invention relates to a composition for forming the resist underlayer film, containing a compound, which has a group including carbon-carbon triple bonds and a partial structure including aromatic rings, and 4 or more of nuclei of benzene in the partial structure forming the aromatic rings, and a solvent. As the partial structure, a first partial structure represented by a chemical formula (1) is desirable. In the chemical formula (1), p1+p2+p3+p4 is desired to be 1 or more and at least one among R1 to R4 is desired to be a monovalent group including carbon-carbon triple bonds. As the group, a propargyl group is desirable. As the partial structure, a second partial structure represented by a chemical formula (2) may be desirable. |
