Semiconductor light-emitting device

摘要

A semiconductor light-emitting device includes a laminated semiconductor structure having a first surface and a second surface opposing each other, a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively forming the first surface and the second surface, and an active layer. First and second electrodes are disposed on the first surface of the laminated semiconductor structure and the second surface of the laminated semiconductor structure, respectively. A connecting electrode extends to the first surface to be connected to the second electrode. A support substrate is disposed on the second electrode, and an insulating layer insulates the connecting electrode from the active layer and the first conductivity-type semiconductor layer.

主权项

1. A semiconductor light-emitting device, comprising:
a laminated semiconductor structure including a first surface and a second surface opposing each other, a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively forming the first surface and the second surface, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer; a first electrode disposed on the first surface of the laminated semiconductor structure and connected to the first conductivity-type semiconductor layer; a second electrode disposed on a majority of the second surface of the laminated semiconductor structure and connected to the second conductivity-type semiconductor layer; a connecting electrode connected to the second electrode and extending to the first surface of the laminated semiconductor structure; a support substrate disposed on the second electrode; and an insulating layer disposed to insulate the connecting electrode from the active layer and the first conductivity-type semiconductor layer.