| 摘要 |
PURPOSE:To prevent impurities from entering in an oxide film by a method wherein, with no voltage applied, a substrate receives the irradiation of oxygen gas plasma and is etched, then, with voltage applied, oxygen gas plasma is irradiated on the substrate where the oxide film is formed. CONSTITUTION:First, a substrate 12 consisting of Hg1-xCdxTe is placed on a substrate support 11 and introduced into a reaction chamber 13, which is evacuated using a vacuum pump linked with an air outlet 15. After this oxygen gas is introduced through a gas supply tube 18 linked with a plasma generating chamber. Then the surface of the substrate is etched and cleaned at a state in which voltage from a DC supply linked with the substrate support is not applied. Next, the surface of the substrate is oxidized at a state in which voltage from a DC supply linked with the substrate support is applied. |
