| 摘要 |
PURPOSE:To improve chemichal resistance by a method wherein a far ultra violet photosensitive photoresist and a photoresist film that is opaque to far ultra violet rays are coated in order, then patterning with a visible ray is followed by patterning with far ultra violet exposure. CONSTITUTION:A negative type photoresist 3 that is photosensitive to far ultra violet rays is coated on a metal film 2 which is coated on a semiconductor substrate 1. Next, a positive type photoresist 4 that is photosensitive to a visible ray and opaque to far ultra violet rays is coated on the above surface, thereon a photomask 5 is place in contact with, then irradiation with a visible ray 6 is followed by development. The positive type photoresist layer which received the visible ray irradiation is removed to form an opening, ultra violet rays 7 is irradiated, and development is performed. Only the opening of a negative type photoresist 3, the lower layer, is exposed, then this is processed in proper etching liquid. |
