发明名称 |
PIEZOELECTRIC/ELECTROSTRICTIVE FILM TYPE ELEMENT |
摘要 |
PROBLEM TO BE SOLVED: To improve the reliability of a piezoelectric/electrostrictive film type element and prolong the useful period of the element by eliminating the need for a special circuit from the element, by making the deterioration of displacement suppressible even when the element is driven for a long period by widening the range of its effective driving electric field from a negative electric field to a positive electric field. SOLUTION: The piezoelectric/electrostrictive film type element 10 is provided with a piezoelectric/electrostrictive layer 24 and at least a pair of electrodes 26a and 26b formed on the layer 24. The layer 24 contains Mn in a Pb- containing perovskite type piezoelectric/electrostrictive material in an amount of 0.1-0.5 wt.% in terms of MnO2 . To be concrete, the layer 24 is constituted of a Pb(Mg1/3 Nb2/3 )O3 -PbZrO3 -PbTiO3 -based perovskite type piezoelectric/ electrostrictive maternal the Pb of which is partially replaced with Sr and which contains Mn in an amount of 0.1-0.5 wt.% in terms of MnO2 . |
申请公布号 |
JP2003086855(A) |
申请公布日期 |
2003.03.20 |
申请号 |
JP20010277871 |
申请日期 |
2001.09.13 |
申请人 |
NGK INSULATORS LTD |
发明人 |
YAMAGUCHI HIROFUMI;KASHIWAYA TOSHIKATSU;YAMAMOTO KAZUHIRO;TAKAHASHI MASARO |
分类号 |
G02B26/08;B41J2/14;C04B35/49;H01L41/09;H01L41/18;H01L41/187 |
主分类号 |
G02B26/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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