| 摘要 |
PURPOSE:To prevent the degradation of high frequency characteristics by setting a collector electrode on the surface of a semiconductor device, selectively setting an emitter region on the lower surface of the base region, and setting an emitter electrode which is electrically connected to the emitter region on the rear surface of the semiconductor device. CONSTITUTION:On top of a collector region 3, a collector region electrode substrate metal 6c is formed, and then a collector electrode 7c is formed on top of this. Furthermore, an oxide film 9 and a base region electrode substrate metal 6b are stacked in order on the part of a base region 2 where the collector region 3 is not formed on top, and then, a base electrode 7b is formed on top of this. Also, on the rear surface of an N diffusion layer 5 to which an emitter layer 4 is connected, and on the rear surface of an epitaxial layer 1, an emitter electrode substrate metal 6e is commonly formed, and an emitter electrode 7e is formed on top of this. As a result, the emitter electrode 7e can be easily grounded.
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