| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce capacitances between metallic conductors by depositing an oxide liner, which is thicker at the top of the metallic conductor than at the side of the metallic conductor, on the metallic conductor in a metallic layer and by depositing a low dielectric material on the oxide liner between the metallic conductors. SOLUTION: A metallic conductor 116 is formed by having a metallic layer deposited on a substrate 112 into a pattern and by etching the pattern. Next, an oxide liner 118 is deposited on the metallic conductor 116 and the exposed part of the substrate 112. The thickness of the oxide liner 118 is made larger at the top of the metallic conductor 116 than at the side of the metallic conductor 116. Next, a low dielectric material, 120 having a permittivity of less than 3.5, is deposited on the oxide liner 118. Then, the low dielectric material 120 is etched back and leaving between the metallic conductors 116 so that the height of the low dielectric material 120 is equal to or more than the overall height of the metallic conductors 116.</p> |
