| 摘要 |
<p>PURPOSE: To make possible using low resistance metal material as gate material, and using glass of a low cost as a substrate, by defining the treatment temperature in the manufacturing process of a thin film transistor, except a process of laser beam irradiation or electron beam irradiation. CONSTITUTION: A silicon thin film 40 is formed on a high melting point glass substrate 33, and a necessary form is obtained by photoetching. The surface is oxidized in an O2 plasma atmosphere. As the result, an oxide film 41 turning to a gate insulating film is formed on the silicon thin film 40. After a second layer silicon thin film 45 is deposited and subjected to photoetching, the oxide film 41 is etched by using the second layer silicon thin film 45 as a mask. Thereby a gate insulating film 41 is formed, and at the same tine, an aperture for diffusion is formed. A source 42 and a drain 43 are formed by ion implantation diffusion. A plasma oxide film 46 is formed on the surface by another plasma treatment in an O2 atmosphere, and annealing is performed at 400-600 deg.C.</p> |
