| 摘要 |
PURPOSE: To provide a light-emitting diode which has a good electric characteristic and to provide its manufacturing method. CONSTITUTION: Zn is diffused selectively into an n-type compound semiconductor substrate 11 through a diffusion window formed in a diffusion mask 13 to form a p-type diffusion region 15. After that, an interlayer insulating film 21a composed of an SiN film is formed in a region up to the surface of the diffusion region 15 via the side face of the diffusion mask on the side of the diffusion window from the surface of the diffusion mask. After that an aluminum electrode as a p-side electrode, 23a is formed on the etched interlayer insulating film 21a In this case, when the aluminum electrode is formed on the etched interlayer insulating film 21a, an aluminum film is etched. When the aluminum film is etched, thermal phosphorus is used. After that, an n-side electrode 25 is formed. In a light-emitting diode array which is manufactured in this manner, the SiN film is used as the interlayer insulating film. |
