| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film depositing method in which a dense thin film of excellent quality can be deposited without being influenced by the thickness of a base material, and a thin film depositing device can be operated for a long time. SOLUTION: In the thin film depositing method in which the base material is disposed between electrodes facing each other, the mixture gas including a reactive gas is put in a plasma state by supplying the power between the facing electrodes under the atmospheric pressure or the pressure in the vicinity of the atmospheric pressure, and a thin film is deposited on a surface of the base material, the voltage of the frequency >=1 kHz and <15 kHz is applied to one electrode out of the electrodes facing each other, and the voltage of the frequency >100 kHz and <=150 MHz is applied to the other electrode. The base material is disposed in an almost contact manner with the other electrode on the higher frequency side. |
