发明名称 INTEGRATED OPTIC MODULATORS WITH HIGH GAIN BANDWIDTH PRODUCT
摘要 The present invention relates to integrated optic modulator devices (1) and methods for their fabrication. Lithium niobate substrates (2) have waveguides (52) fabricated in them for propagating light energy, preferably in Mach Zhender architectures, and in the middle of these waveguides there is a central electrode (51). The waveguides are also bordered by adjacent electrode metallizations (50) of low resistivity, such as copper and silver, to provide the devices with high gain bandwidth products to reduce the cost of drive electronics and simplify processing procedures. The modulator device also includes a buffer layer (55), preferably silicon dioxide. Gain bandwidth products exceed 4.5 x 10<5>. The waveguide is terminated with impedance (54) for best RF performance and an RF driver (56) is connected to the electrodes.
申请公布号 WO9942887(A1) 申请公布日期 1999.08.26
申请号 WO1999US03084 申请日期 1999.02.11
申请人 RAMAR CORPORATION 发明人 MAHAPATRA, AMARESH;HALLEMEIER, PETER, F.;LI, HAI, QING
分类号 G02F1/035;G02F1/03;G02F1/225;(IPC1-7):G02B26/00 主分类号 G02F1/035
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