| 摘要 |
An induction device has p-n junctions, between which an inverse polarization voltage is applied for complete depletion of a semiconductor substrate surface. An induction device, formed on a semiconductor substrate (10), comprises p-n junctions formed at the substrate surface and a conductive film (16) of coil shape on an insulating film (12) overlying the p-n junction zone, an inverse polarization voltage being applied between the p-n junctions such that at least a zone of the substrate surface is completely depleted. An Independent claim is also included for similar induction devices.
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