| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of preventing an abnormal discharge from occurring between a susceptor and a plasma. SOLUTION: The plasma processing apparatus comprises: a process chamber 2 in which a processing substrate G is accommodated; a susceptor 5 provided in the process chamber 2 on which the substrate G is mounted; an upper electrode 12 opposed to the susceptor 5 in the chamber 2; a process gas supply unit 19 for supplying a process gas into the chamber 2; an evacuation unit 21 for evacuating inside of the chamber 2; a high frequency power supply 26 for supplying a high frequency power to the susceptor 5 so that a plasma of the process gas is produced in a processing space 2a between the susceptor 5 and the upper electrode 12; and a shield 7 which surrounds a peripheral side wall of the substrate G so that a short-circuit path from the plasma to a side wall 5c of the substrate G on the susceptor is shielded. |
