SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

摘要

PURPOSE: An element separation film forming method of a semiconductor unit is provided to improve yield of the semiconductor unit by minimizing loss in the following wet etching or cleaning processes and preventing element fail due to the etching residues. CONSTITUTION: An oxidation barrier film(31) pattern is formed on a semiconductor plate(30). A trench is formed on the exposed semiconductor plate(30). SiH4-H2O2 oxide film(34) is deposited on the entire structure. Silicon and oxygen ions are implanted to the SiH4-H2O2 oxide film(34). Si-O bond is induced at the dangling bond of the SiH4-H2O2 oxide film(34) through a first thermal treatment. A chemical mechanical polishing and a removing process of the oxidation barrier film(31) pattern are performed on the SiH4-H2O2 oxide film(34).