METHOD OF FORMING FINE PATTERN OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a fine pattern of a semiconductor device is provided to improve the characteristic and reliability of a semiconductor device by etching a lower layer using a photoresist film pattern. CONSTITUTION: A transparent thin film is formed on a semiconductor substrate(40) having a high reflective rate. A dual anti-reflective layer is formed by sequentially forming an amorphous silicon layer and a silicon oxynitride layer on the transparent thin film. Then, a photoresist film pattern is formed on the dual anti-reflective layer. The dual anti-reflective layer and the transparent thin film are etched by using the photoresist film pattern as a mask. Then, the photoresist film pattern is removed. The dual anti-reflective layer includes a polycrystalline silicon/silicon oxynitride layer.