| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to achieve a transistor and a wiring having a fine line width by adopting an exposing technique using G line and I line. CONSTITUTION: A gate insulating layer(22), a polysilicon layer(23), and the first insulating layer are sequentially stacked on a semiconductor substrate(21). Then, the first insulating layer is selectively removed so as to partially expose the polysilicon layer(23). After that, the second insulating layer is formed on the semiconductor substrate(21) including the first insulating layer. Then, a sidewall spacer is formed at both sides of the first insulating layer by selectively removing the second insulating layer. A silicide layer(27) is formed on the exposed polysilicon layer(23). Then, the first insulating layer, the sidewall spacer, and the polysilicon layer(23) are selectively removed by performing the etching process.
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