| 摘要 |
PURPOSE: A method of preparing a thin line on a semiconductor element is provided to prepare an ultra-thin line by using a negative photosensitive film and, overexposing and etching a poly-silicon film with an oxide film deposited by liquid deposition as a mask. CONSTITUTION: After forming a gate oxide film(2), a poly-silicon film(3), a negative oxide film(4) and a photosensitive film on a silicon plate(1) in the stated order, it is overexposed using a reticle(7) and a negative photosensitive film to form a photosensitive pattern(5). After inserting a wafer in a liquid depositing vessel, an oxide film is selectively deposited on the area with no photosensitive pattern(5). After the photosensitive pattern(5) is removed, etching is performed in a poly-silicon etching device to form a thin line.
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