Semiconductor component, especially a submicron or deep submicron DRAM cell, has a deep trench with upper and lower side wall regions separated at a certain depth by an abrupt width increase

摘要

A semiconductor component, with a submicron deep trench having upper and lower side wall regions separated at a certain depth by an abrupt increase in the trench width, is new. A novel semiconductor component comprises a substrate (100) with a deep trench having a depth-dependent width distribution, a width of <= 0.25 mu at the substrate surface and a depth/width ratio of /-15. The trench side wall has upper and lower regions separated at a certain depth by an abrupt increase in the trench width and thus side wall circumference, the upper region containing no oxide ring of /-300 a thickness. Independent claims are also included for the following: (i) a process for producing the above semiconductor component; and (ii) a DRAM cell of <= 0.25 mu nominal size having a deep trench as described above.