发明名称 |
Consistent alignment mark profiles on semiconductor wafers using metal organic chemical vapor deposition titanium nitride protective layer |
摘要 |
Provided is a method and composition for protecting alignment mark trench walls from attack by CMP slurry accumulating in an alignment mark trench during CMP processing. In a preferred embodiment, a metal organic chemical vapor deposition titanium nitride (MOCVDTiN) layer is deposited over a conventionally applied bulk tungsten layer prior to commencing CMP operations. This MOCVDTiN layer is resistant to CMP slurry attack. As a result, the tungsten trench profile remains a consistent and reliable alignment mark.
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申请公布号 |
US6157087(A) |
申请公布日期 |
2000.12.05 |
申请号 |
US19990289828 |
申请日期 |
1999.04.12 |
申请人 |
LSI LOGIC CORPORATION |
发明人 |
ZHAO, JOE W.;DOU, SHUMAY X.;CHAO, KEITH K. |
分类号 |
H01L21/314;H01L23/544;(IPC1-7):H01L23/544 |
主分类号 |
H01L21/314 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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