发明名称 |
Method of treating active material |
摘要 |
An active substance treating method is characterized in that an active substance is caused to react with an inactivating substance in an exhaust system for a thin film forming apparatus. A thin film forming apparatus includes a common chamber having a region where plasma CVD is carried out and a region where thermal CVD is carried out, a device provided in the chamber for pressing a substrate onto a holder, a lamp for illuminating light having a component of a wavelength of 1 mu m or above to heat the substrate, an introducing port for separately introducing two active substances to a vicinity of the substrate, a vaporizing device in which at least two bubblers are series-connected to vaporize the active substances, and an exhaust system which is divided into two systems each of which has a heater and which has a port for introducing an inactivating substance into an exhaust pump.
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申请公布号 |
US6156657(A) |
申请公布日期 |
2000.12.05 |
申请号 |
US19960637410 |
申请日期 |
1996.04.25 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
KUWABARA, HIDESHI;KAWASUMI, YASUSHI;ASABA, TETSUO;MAKINO, KENJI;KATAOKA, YUZO;SEKINE, YASUHIRO;NISHIMURA, SHIGERU |
分类号 |
B01D53/72;C23C16/44;H01J37/32;(IPC1-7):H01L21/44 |
主分类号 |
B01D53/72 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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