| 摘要 |
PURPOSE: A method for forming a metal gate electrode is provided to enhance GOI characteristic by forming WNx thin film being a conductive diffusion barrier layer between a tungsten layer and a doped polycrystalline silicon layer at an atmospheric pressure, and to enhance characteristic of a semiconductor device by improving a resistance uniformity of the doped polycrystalline silicon layer. CONSTITUTION: A gate insulating layer(31) and a doped polycrystalline silicon layer(33) are sequentially formed on a semiconductor substrate. WNx thin film(35) as a conductive diffusion barrier layer is formed on the doped polycrystalline silicon layer, by using the CVD method using RF plasma. A tungsten layer(37) of a high melting point metal is formed on the WNx thin film. The tungsten layer, the WNx thin film, a doped polysilicon layer and a gate insulating layer are etched to form a gate electrode.
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