发明名称 CAPACITOR STACK STRUCTURE AND METHOD OF FABRICATING
摘要 <p>A capacitor structure that comprises a top platinum electrode and a bottom electrode having insulator on the sidewalls of the electrodes, and wherein the bottom electrode is from depositing a first electrode portion being recessed with respect to the insulator on the sidewalls thereof and depositing a second electrode portion is provided.</p>
申请公布号 WO2001084607(A1) 申请公布日期 2001.11.08
申请号 US2001014242 申请日期 2001.05.02
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