| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem of a performance enhancing technique in the microfabrication of a semiconductor device using electron beams or X-rays and to provide a negative type chemical amplification type resist composition for electron beams or X-rays which satisfies characteristics such as sensitivity and resolution in the use of electron beams or X-rays, resist shape, development defects, appliability and solubility in a solvent. SOLUTION: The negative type chemical amplification type resist composition contains a compound which generates an acid and/or a radical species when irradiated with electron beams or X-rays, an alkali-soluble resin, a crosslinker which causes crosslinking under the acid and a solvent. |
