| 摘要 |
PROBLEM TO BE SOLVED: To provide a very reliable semiconductor device which can effectively prevent destruction of p-n junctions due to cracks. SOLUTION: On the upper surface of a single-crystal substrate 1, an n-type semiconductor layer 3 is attached into a belt-like shape. On the n-type semiconductor layer 3, a plurality of p-type semiconductor layers 4 which are narrower than the n-type semiconductor layer 3 are attached in order at a specified space apart, each p-type semiconductor layer 4 forming an p-n junction with the n-type semiconductor layer 3. The n-type semiconductor layer 3 is formed with slits 3a, each being formed between each two adjacent p-type semiconductor layers, in a direction of crossing at right angles with the arrangement direction of the p-type semiconductor layers 4. |
