发明名称 |
Surface emitting semiconductor laser device |
摘要 |
A surface emission semiconductor laser device includes a GaAs substrate and a layer structure having a plurality of constituent layers including an active layer, a pair of cladding layers, and a pair of multilayer semiconductor mirrors. One of the multilayer mirrors includes an AlAs layer having an Al-oxidized area forming a current confinement structure. At least one of the constituent layers, such as active layer or one of the multilayer mirrors, has an oxygen density of 1x1018 cm-3 or less. The laser device suppresses reduction of the optical output power with time.
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申请公布号 |
US2002167985(A1) |
申请公布日期 |
2002.11.14 |
申请号 |
US20020125313 |
申请日期 |
2002.04.17 |
申请人 |
SHINAGAWA TATSUYUKI;YOKOUCHI NORIYUKI;SHIINA YASUKAZU;KASUKAWA AKIHIKO |
发明人 |
SHINAGAWA TATSUYUKI;YOKOUCHI NORIYUKI;SHIINA YASUKAZU;KASUKAWA AKIHIKO |
分类号 |
H01S5/183;(IPC1-7):H01S5/00 |
主分类号 |
H01S5/183 |
代理机构 |
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地址 |
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