GROWING METHOD OF LARGE DIAMETER SIC SINGLE CRYSTAL FOR HIGH QUALITY,申请号KR20050016436-传众专利搜索

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发明名称	GROWING METHOD OF LARGE DIAMETER SIC SINGLE CRYSTAL FOR HIGH QUALITY
摘要
申请公布号	KR20060095656(A)	申请公布日期	2006.09.01
申请号	KR20050016436	申请日期	2005.02.28
申请人	NEOSEMITECH INC.	发明人	SEO, SOO HYUNG;KIM, KWAN MO;KIM, JAE WOO;SONG, JOON SUK;OH, MYUNG HWAN
分类号	C30B23/00;C30B29/36	主分类号	C30B23/00
代理机构		代理人
主权项
地址

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