发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p>A method for fabricating a semiconductor substrate is provided to increase the on/off ratio of a semiconductor device by increasing on-current or reducing off-current. A solution containing an organic semiconductor material is coated on a water-repellent surface(30a) of a stamp substrate(30) having a water-repellent property. The solution containing the organic semiconductor material coated on the water-repellent surface is dried so that the organic semiconductor material is crystallized while the organic semiconductor material comes in contact with the water-repellent surface, and an organic semiconductor layer(20) is formed. A heat treatment is performed on the organic semiconductor layer formed on the stamp substrate. A water-repellent process is performed on the surface of a transferred substrate(10). The surface of the stamp substrate having the organic semiconductor layer is pressed to the surface of a transferred substrate so that the organic semiconductor layer is transferred to the surface of a corresponding transferred substrate.</p>
申请公布号 KR20070075299(A) 申请公布日期 2007.07.18
申请号 KR20070002100 申请日期 2007.01.08
申请人 SONY CORPORATION 发明人 NOMOTO AKIHIRO
分类号 H01L29/786 主分类号 H01L29/786
代理机构 代理人
主权项
地址