| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for fabricating a semiconductor device in which variation can be suppressed in resistance of magnetoresistic effect elements. SOLUTION: A magnetoresistive effect element is formed on a semiconductor substrate while sandwiching a nonmagnetic layer between a pinned layer composed of a ferromagnetic material having a fixed magnetization direction and a free layer having a magnetization direction which varies depending on the external magnetic field (a). An interlayer dielectric layer is formed to cover the magnetoresistive effect element, in such an insulating material as becoming an insulator which permeate less moisture as compared with the original material through nitriding (b). Surface layer of the interlayer dielectric layer is then nitrided (c). COPYRIGHT: (C)2007,JPO&INPIT
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