发明名称 |
MULTI-LEVEL CELL MEMORY DEVICE USING HIGH RATE CODE |
摘要 |
A multi-level cell memory device using high rate code is provided to minimize overhead of encoding and decoding as increasing the number of bits stored in one multi-level cell, by writing data in the multi-level cell memory through encoding of high code rate. A multi-level cell memory device storing data includes a groups of m-bit MLC(Multi-Level Cell) memory cells(261,262,263,264) where a and m are an integer above 2, an encoder(210) and a signal mapping part(220). The encoder generates encoded bit stream by encoding k bit data with code rate of k/n. The signal mapping part writes the encoded bit stream in the groups of m-bit MLC memory cells by applying a pulse according to the encoded bit stream to the group of m-bit MLC memory cells.
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申请公布号 |
KR100822030(B1) |
申请公布日期 |
2008.04.15 |
申请号 |
KR20060134049 |
申请日期 |
2006.12.26 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KONG, JUN JIN;PARK, SUNG CHUNG;KANG, DONG KU;LEE, YOUNG HWAN;HONG, SI HOON;HYUN, JAE WOONG |
分类号 |
G11C7/20;G11C7/22 |
主分类号 |
G11C7/20 |
代理机构 |
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地址 |
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