METHOD OF MONITORING A CONTACT OPENING DEFECT IN SEMICONDUCTOR DEVICE

摘要

A method for inspecting a contact opening defect of a semiconductor device is provided to improve the reliability of measurement data by using optical inspection equipment. An insulating layer is formed on a substrate on which a plurality of conductive patterns are formed(S100). The insulating layer is selectively etched to form a contact hole for opening a surface of the substrate between the conductive patterns(S110). A selective epitaxial growth process is performed on the opened substrate surface to form a silicon layer to gap-fill the contact hole(S120). A part on which the silicon layer is not grown is determined as a contact open defect part by using optical inspection equipment(S130). The selective epitaxial growth process is performed under 500 to 1000 °C.