| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an electrooptical device having satisfactory transistor characteristics and capable of preventing an image defect by preventing arrival of light to a channel region of a TFT and to provide an electronic device. <P>SOLUTION: In the electrooptical device, first and second interlayer insulating layers 12 and 13 composed of a first dielectric are formed so as to cover the periphery including lower and upper layer sides of the TFT 30, a first light shielding layer 11 for covering the under surface of at least the first interlayer insulating layer 12 is formed so as to be two-dimensionally superposed on the TFT 30, a third dielectric layer 14 composed of a second dielectric having a refractive index different from that of the first dielectric is formed in a light transmission region of a pixel so as to come in contact with side surfaces of the first and the second interlayer insulating layers 12 and 13 and the boundary surface B between the first and the second dielectrics is positioned on the first light shielding layer 11. <P>COPYRIGHT: (C)2008,JPO&INPIT |
