发明名称 |
SEMICONDUCTOR MEMORY DEVICE WITH FERROELECTRIC DEVICE |
摘要 |
A semiconductor memory device comprises a one-transistor (1-T) field effect transistor (FET) type ferroelectric device connected between a pair of bit lines and controlled by a word line, where a different channel resistance is induced to a channel region depending on a polarity state of a ferroelectric layer; a plurality of access transistors connected between the ferroelectric device and the pair of bit lines; and a plurality of port word lines configured to select the plurality of access transistors.
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申请公布号 |
US2009010037(A1) |
申请公布日期 |
2009.01.08 |
申请号 |
US20070956394 |
申请日期 |
2007.12.14 |
申请人 |
KANG HEE BOK;HONG SUK KYOUNG |
发明人 |
KANG HEE BOK;HONG SUK KYOUNG |
分类号 |
G11C11/22 |
主分类号 |
G11C11/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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