IMAGE SENSING CELL WITH FLOATING CHARGE STORAGE, DEVICE, METHOD OF OPERATION, AND METHOD OF MANUFACTURE

摘要

An image sensing device includes one or more image sensing cells. Each image sensing cell has a charge store element (102, 204) formed from a semiconductor material doped to a first conductivity type. The charge store element is in contact with a channel region (102, 208) formed from a semiconductor material of a second conductivity type. The charge store element has one or more surfaces for exposure to an image spurce. Each image sensing cell also includes a charge electrode (202) formed from a semiconductor material of the first conductivity type that is separated from the charge store element by the channel region (208). In addition, one or more current detection electrodes (206) are included in each image sensing cell. A current detection electrode passes a current flowing through the channel region in a read operation. Such an image sensing cell can be compact in size and/or have a large image sensing area.