发明名称 INTERCONNECTION STRUCTURE
摘要 An interconnection structure includes an inter-layer dielectric; a topmost copper metal layer inlaid into the inter-layer dielectric; an insulating layer disposed on the inter-layer dielectric and the topmost copper metal layer; a via opening in the insulating layer for exposing a top surface of the topmost copper metal layer, wherein the via opening consists of an inwardly tapered upper via portion and a lower via portion having a substantially vertical sidewall profile; and an aluminum layer filling into the via opening.
申请公布号 US2009057907(A1) 申请公布日期 2009.03.05
申请号 US20070847335 申请日期 2007.08.30
申请人 YANG MING-TZONG;CHANG TIEN-CHANG 发明人 YANG MING-TZONG;CHANG TIEN-CHANG
分类号 H01L23/52 主分类号 H01L23/52
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