发明名称 |
INTERCONNECTION STRUCTURE |
摘要 |
An interconnection structure includes an inter-layer dielectric; a topmost copper metal layer inlaid into the inter-layer dielectric; an insulating layer disposed on the inter-layer dielectric and the topmost copper metal layer; a via opening in the insulating layer for exposing a top surface of the topmost copper metal layer, wherein the via opening consists of an inwardly tapered upper via portion and a lower via portion having a substantially vertical sidewall profile; and an aluminum layer filling into the via opening.
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申请公布号 |
US2009057907(A1) |
申请公布日期 |
2009.03.05 |
申请号 |
US20070847335 |
申请日期 |
2007.08.30 |
申请人 |
YANG MING-TZONG;CHANG TIEN-CHANG |
发明人 |
YANG MING-TZONG;CHANG TIEN-CHANG |
分类号 |
H01L23/52 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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