| 摘要 |
PROBLEM TO BE SOLVED: To prevent oxidation in processing the lower electrode in an MIM capacitor. SOLUTION: A region of oxidation amount being independent of the ashing time is used, and an ashing speed causing no problem in the production is ensured because of an oxygen proportion which oxidizes no metal prior to resist removal. In the resist film ashing process for lower electrode processing in the MIM capacitor, the proportion of the oxygen gas for ashing at the predetermined temperature without a bias is set to the proportion of the oxygen at which the oxidation amount of a first metal film is independent of the ashing time. COPYRIGHT: (C)2009,JPO&INPIT
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