发明名称 |
METHOD OF PREPARING A SUBSTRATE AND A SUBSTRATE PREPARED THEREBY |
摘要 |
PURPOSE: A board manufacture method and a substrate thereof are provided to the gas remains in the polymer base or glass from diffusing to the transparent conducting oxide. CONSTITUTION: The buffer layer is deposited on the base in which the transparent conducting oxide is coated. The buffer layer is formed by charging the silicon titanium oxide or the silicon titanium aluminium oxynitride with high-frequency sputtering. The silicon titanium oxide and the silicon titanium aluminium oxynitride are deposited by turns. The silicon titanium oxide and the silicon titanium aluminium oxynitride have the bi-layer structure. The base is the resin film including PES, PC, PET or PEN, or the glass. The high-frequency sputtering is performed with the magnetron sputtering apparatus having the frequency band of 13.56 MHz. The transparent conducting oxide is coated on the upper side of the buffer layer. The coating is made of the low frequency sputtering discharge(320) of 10~100 Hz. The transparent conducting oxide is ITO.
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申请公布号 |
KR20090121186(A) |
申请公布日期 |
2009.11.25 |
申请号 |
KR20090008756 |
申请日期 |
2009.02.04 |
申请人 |
DONGJIN SEMICHEM CO., LTD.;KYUNGPOOK NATIONAL UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION |
发明人 |
SHON, SANG HO;PARK, JONG DAI;LEE, HO KYOU |
分类号 |
C23C14/34;C23C14/08;H01L21/203 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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