SEAM-FREE TUNGSTEN PATTERN USING A TUNGSTEN REGROWING AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A phase change memory device and a manufacturing method thereof are provided to manufacture a device of uniform resistance density by forming seamless metal wiring on a tungsten layer of a semiconductor substrate through tungsten regrowth. CONSTITUTION: A first inter-layer dielectric(245) is formed on a semiconductor substrate(200). A contact hole is formed in the first inter-layer dielectric. A seamless tungsten layer is formed in the contact hole. A regrowth tungsten layer(283) containing oxygen is formed on the tungsten layer. A second inter-layer dielectric(250) surrounds the regrowth tungsten layer on the first inter-layer dielectric.