Phase change memory cell

摘要

A phase change memory cell includes a first circuit and a second circuit. The first circuit includes a first electrode, a carbon nanotube wire and a second electrode electrically connected in series; wherein the first circuit is adapted to write data into the phase change memory cell or reset the phase change memory cell. The second circuit includes a third electrode, a phase change layer, the carbon nanotube wire, and the first electrode or the second electrode electrically connected in series, wherein the second circuit is adapted to read data from the phase change memory cell or reset the phase change memory cell, the carbon nanotube wire includes a bending portion, the third electrode is spaced from the bending portion, and the phase change layer covers the bending portion of the carbon nanotube wire.

主权项

1. A phase change memory cell, comprising:
a first circuit, wherein the first circuit comprises a first electrode, a carbon nanotube wire and a second electrode electrically connected in series; wherein the first circuit is adapted to write data into the phase change memory cell or reset the phase change memory cell; a second circuit, wherein the second circuit comprises a third electrode, a phase change layer, the carbon nanotube wire, and one of the first electrode and the second electrode electrically connected in series, wherein the second circuit is adapted to read data from the phase change memory cell or reset the phase change memory cell, the carbon nanotube wire comprises a bending portion, the third electrode is spaced from the bending portion, and the phase change layer covers the bending portion of the carbon nanotube wire.