III-n device with dual gates and field plate

摘要

A semiconductor apparatus includes a substrate; a first semiconductor layer formed on the substrate and formed of a nitride semiconductor; a second semiconductor layer formed on the first semiconductor layer and formed of a nitride semiconductor; first and second gate electrodes, a source electrode, and a drain electrode formed on the second semiconductor layer; an interlayer insulation film formed on the second semiconductor layer; and a field plate formed on the interlayer insulation film. Further, the first gate electrode and the second gate electrode are formed between a region where the source electrode is formed and a region where the field plate is formed, an element isolation region is formed in the first and the second semiconductor layers which are between the first and the second gate electrodes, and the second gate electrode is electrically connected to the source electrode.

主权项

1. A semiconductor apparatus comprising:
a substrate; a first semiconductor layer formed on the substrate and formed of a nitride semiconductor; a second semiconductor layer formed on the first semiconductor layer and formed of a nitride semiconductor; a first gate electrode and a second gate electrode, a source electrode, and a drain electrode formed on the second semiconductor layer; an interlayer insulation film formed on the second semiconductor layer; and a field plate formed on the interlayer insulation film, wherein the first gate electrode and the second gate electrode are formed between a region where the source electrode is formed and a region where the field plate is formed, wherein an element isolation region is formed in the first and the second semiconductor layers between the first and the second gate electrodes, thereby forming, as part of the semiconductor apparatus,
a first high electron mobility transistor (HEMT) having the first gate electrode as a gate electrode thereof,a second HEMT having the second gate electrode as a gate electrode thereof, the source electrode being common between the first HEMT and the second HEMT, anda third transistor having the field plate as a gate electrode thereof, wherein a gate recess is formed under the first gate electrode by partially removing the second semiconductor layer, the gate recess causing a gate threshold value voltage of the first HEMT to be greater than a gate threshold value voltage of the second HEMT, wherein the source electrode is electrically connected to the field plate to cause a gate voltage of the third transistor to be the same as a source voltage of the first HEMT and the second HEMT, and wherein the second gate electrode is electrically connected to the source electrode to cause a gate voltage of the second HEMT to be the same as the source voltage.