| 发明名称 | Semiconductor graphene structures, semiconductor devices including such structures, and related methods | ||
| 摘要 | A semiconducting graphene structure may include a graphene material and a graphene-lattice matching material over at least a portion of the graphene material, wherein the graphene-lattice matching material has a lattice constant within about ±5% of a multiple of the lattice constant or bond length of the graphene material. The semiconducting graphene structure may have an energy band gap of at least about 0.5 eV. A method of modifying an energy band gap of a graphene material may include forming a graphene-lattice matching material over at least a portion of a graphene material, the graphene-lattice matching material having a lattice constant within about ±5% of a multiple of the lattice constant or bond length of the graphene material. | ||
| 申请公布号 | US9349803(B2) | 申请公布日期 | 2016.05.24 |
| 申请号 | US201414521088 | 申请日期 | 2014.10.22 |
| 申请人 | Micron Technology, Inc. | 发明人 | Meade Roy E.;Pandey Sumeet C. |
| 分类号 | H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119;H01L29/16;H01L21/02;H01L27/092;H01L29/165;H01L29/78;H01L29/51;H01L29/778 | 主分类号 | H01L29/76 |
| 代理机构 | TraskBritt | 代理人 | TraskBritt |
| 主权项 | 1. A semiconductor structure, comprising: a graphene material; and a graphene-lattice matching material over at least a portion of the graphene material, the graphene-lattice matching material comprising a unit cell vector in alignment with a lattice vector of the graphene material or with a graphene bond of the graphene material, wherein the semiconductor structure comprises an energy band gap of at least about 0.5 eV. | ||
| 地址 | Boise ID US | ||