Plasma etching method and plasma etching apparatus

摘要

A plasma etching apparatus includes a processing chamber; a holding unit for holding the substrate within the processing chamber; an electrode plate facing the holding unit; a plurality of supply parts arranged at different radial positions with respect to the substrate for supplying processing gas to a space between the holding unit and the electrode plate; a high frequency power supply that supplies high frequency power to the holding unit and/or the electrode plate to convert the processing gas supplied to the space into plasma; an adjustment unit that adjusts a supply condition for each of the supply parts; and a control unit that controls the adjustment unit to vary the supply condition between a position where an effect of diffusion of processing gas on an active species concentration distribution at the substrate is dominant and a position where an effect of flow of the processing gas is dominant.

主权项

1. A plasma etching apparatus that etches a substrate using a processing gas converted into plasma, the plasma etching apparatus comprising: a processing chamber;
a holding unit that is arranged within the processing chamber and is configured to hold the substrate; an electrode plate that is arranged to face the holding unit within the processing chamber; a plurality of supply parts for supplying processing gas to a space between the holding unit and the electrode plate, the supply parts being arranged at different positions with respect to a radial direction of the substrate; a high frequency power supply that converts the processing gas supplied to the space from the plurality of supply parts into plasma by supplying a high frequency power to at least one of the holding unit and the electrode plate; an adjustment unit that adjusts at least one of an amount of the processing gas and species of the processing gas with respect to each of the plurality of supply parts; and a control unit that controls the adjustment unit to vary said at least one of the amount of the processing gas and the species of the processing gas between a first position and a second position, the first position being where an effect of diffusion of supplied processing gas is greater than an effect of flow of supplied processing gas on an active species concentration distribution of active species contained in the plasma-converted processing gas at the substrate, and the second position being where the effect of flow of supplied processing gas is greater than the effect of diffusion of supplied processing gas on the active species concentration distribution at the substrate, wherein the plurality of supply parts include a first supply part for supplying processing gas to a center portion of the substrate that is toward a radial center of the substrate and a second supply part for supplying processing gas to a substrate portion that is toward a radial periphery of the substrate with respect to the center portion; wherein the control unit controls the adjustment unit to adjust a first supply condition including at least one of an amount of the processing gas and species of the processing gas from the first supply part if the effect of flow is greater than the effect of diffusion on the active species concentration distribution at the substrate portion where the processing gas is supplied from the second supply part, wherein the control part controls the adjustment unit to adjust a second supply condition including at least one of an amount of the processing gas and species of the processing gas from the second supply part if the effect of diffusion is greater than the effect of flow on the active species concentration distribution at the substrate portion where the processing gas is supplied from the second supply part; wherein the control part includes a non-transitory memory unit configured to store a program and a central processing unit configured to perform the program so as to calculate a Peclet number calculated by uL/D where u denotes a processing gas flow rate and D denotes a processing gas diffusion coefficient at the substrate portion where the processing gas is supplied from the second supply part, and L denotes a distance between the holding unit and the electrode plate, wherein the effect of diffusion is greater than the effect of flow in a case where the Peclet number is less than one; and wherein the effect of flow is greater than the effect of diffusion in a case where the Peclet number is greater than one.