发明名称 Method of loading a charge of polysilicon into a crucible
摘要 A method of loading a crucible includes loading a first layer of polysilicon chunks into the crucible and loading a second layer of granular polysilicon into the crucible to form a polysilicon charge such that the packing density of the polysilicon charge within the crucible is greater than 0.70.
申请公布号 US9359691(B2) 申请公布日期 2016.06.07
申请号 US201213685323 申请日期 2012.11.26
申请人 MEMC Electronic Materials SpA 发明人 Martini Umberto;Bonanno Luigi;Collareta Paolo;Porrini Maria
分类号 C30B15/02;C30B15/10;C30B11/04;C30B29/06 主分类号 C30B15/02
代理机构 Armstrong Teasdale LLP 代理人 Armstrong Teasdale LLP
主权项 1. A method of loading a crucible, comprising: loading a first layer of polysilicon chunks into the crucible; loading a second layer of granular polysilicon into the crucible; and loading a third layer of polysilicon particles into the crucible such that the following equation is satisfied: PDC=PDL+(1−PDL)PDM+(1−PDL)(1−PDM)PDS, wherein: PDC is a packing density of a charge of polysilicon within the crucible; PDL is a packing density of the polysilicon chunks; PDM is a packing density of the polysilicon particles; and PDS is a packing density of the polysilicon granules, and wherein the packing density of polysilicon within the crucible is greater than about 0.70.
地址 Novara IT