发明名称 |
Method of loading a charge of polysilicon into a crucible |
摘要 |
A method of loading a crucible includes loading a first layer of polysilicon chunks into the crucible and loading a second layer of granular polysilicon into the crucible to form a polysilicon charge such that the packing density of the polysilicon charge within the crucible is greater than 0.70. |
申请公布号 |
US9359691(B2) |
申请公布日期 |
2016.06.07 |
申请号 |
US201213685323 |
申请日期 |
2012.11.26 |
申请人 |
MEMC Electronic Materials SpA |
发明人 |
Martini Umberto;Bonanno Luigi;Collareta Paolo;Porrini Maria |
分类号 |
C30B15/02;C30B15/10;C30B11/04;C30B29/06 |
主分类号 |
C30B15/02 |
代理机构 |
Armstrong Teasdale LLP |
代理人 |
Armstrong Teasdale LLP |
主权项 |
1. A method of loading a crucible, comprising:
loading a first layer of polysilicon chunks into the crucible; loading a second layer of granular polysilicon into the crucible; and loading a third layer of polysilicon particles into the crucible such that the following equation is satisfied:
PDC=PDL+(1−PDL)PDM+(1−PDL)(1−PDM)PDS, wherein: PDC is a packing density of a charge of polysilicon within the crucible; PDL is a packing density of the polysilicon chunks; PDM is a packing density of the polysilicon particles; and PDS is a packing density of the polysilicon granules, and wherein the packing density of polysilicon within the crucible is greater than about 0.70. |
地址 |
Novara IT |