| 发明名称 |
Semiconductor structure with one or more through-holes |
| 摘要 |
Semiconductor structures with one or more through-holes are disclosed. A feed-through metallization process may be used to seal the through-holes hermetically.
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| 申请公布号 |
US2003071283(A1) |
申请公布日期 |
2003.04.17 |
| 申请号 |
US20020264440 |
申请日期 |
2002.10.04 |
| 申请人 |
HYMITE A/S |
发明人 |
HESCHEL MATTHIAS |
| 分类号 |
G02B6/122;G02B6/42;H01L21/768;H01L23/02;H01L23/38;H01L23/48;H01L23/52;H01L31/0203;(IPC1-7):H01L31/032 |
主分类号 |
G02B6/122 |
| 代理机构 |
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代理人 |
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