| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor wafer which allows an increase in the number of semiconductor chips to be picked from one wafer while reducing defects in a cut shape, which is caused by stealth dicing.SOLUTION: In a semiconductor wafer manufacturing method, a first scribe line 3 out of the first scribe line 3 and a second scribe line 4 orthogonal to each other is arranged in a direction parallel with a cleavage direction, and accessory patterns 6 are arranged at positions which overlap a laser irradiation region 10 of stealth dicing in a centered state. By doing this, when laser beams are irradiated on the laser irradiation region 10, a modified layer is formed discontinuously inside a semiconductor wafer, however, since non-modified regions where the modified layer is unconnected are cleaved in the cleavage direction at the time of fracturing, the occurrence of chips and cracks can be reduced. In addition, since the laser irradiation region 10 overlaps the accessory patterns 6, as much as a width of the first scribe line 3 can be decreased, the number of semiconductor chips 2 to be picked can be increased.SELECTED DRAWING: Figure 5 |
