| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element and a semiconductor element manufacturing method, which can expand the proper extent of an acceptor dose amount of a JTE region, which can ensure predetermined breakdown voltage by less number of processes.SOLUTION: A semiconductor element comprises an edge termination structure part 12 which includes: a protective insulation film 7 provided so as to cover a ptype well region 4 which composes a single zone JTE structure; and a positive charge region 8 provided on an outer peripheral end 7b side of a portion 7a of the protective insulation film 7, which covers the ptype well region 4. The positive charge region 8 is formed by selectively ion implanting an n type impurity such as nitrogen, phosphorous and arsenic into the protective insulation film 7 to electrically activate the n type impurity by annealing. In a portion 4b on the outer peripheral side of the ptype well region 4, which is covered with the positive charge region 8, acceptor is compensated for by the positively ionized n type impurity at the time of forming the positive charge region 8 and an effective negative-charge surface density of the portion 4b of the ptype well region 4 is lower than that of a portion 4a on an inner peripheral side of the ptype well region 4, which is not covered with the positive charge region 8.SELECTED DRAWING: Figure 1 |
